Effect of substrate temperature on HWCVD deposited a-SiC:H film

Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited using pure SiH4 and C2H2 without hydrogen dilution by hot wire chemical vapor deposition (HWCVD) technique. The photoluminescence, optical, and structural properties of these films were systematically studied as a function of substrate temperature (Ts). a-SiC:H films deposited at lower substrate temperature (Ts) show degradation in their structural, optical and network properties. The hydrogen content (CH) in the films was found to be increased with decrease of Ts studied. Photoluminescence spectra shift to higher energy and less FWHM at high Ts. Raman spectroscopic analysis showed that structural disorder increases with decrease in the Ts.