کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1653152 | 1007657 | 2006 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Low temperature synthesis and dielectric properties of BaTi1 − xSnxO3 Low temperature synthesis and dielectric properties of BaTi1 − xSnxO3](/preview/png/1653152.png)
A series of BaTi1 − xSnxO3 (0 ≤ x ≤ 0.3) solid solutions were synthesized by solid-state reaction at room temperature. XRD and d-Spacing-component figures of the solid solutions powder demonstrate that the compounds are mutually miscible in the solid solutions. Though the TEM photograph shows that the particles are uniform and substantially spherical with an average particle size of 40 nm in diameter. The remarkable advantages of the method are high yields, no solvents and no pollution. The results of preparing ceramics show that after adulterating with Sn4+ in pure BaTiO3 phase, the dielectric constant obviously increased and dielectric loss reduced at normal temperature. Furthermore, the study on the micro-structure of the BaTiO3 ceramics at different sintering temperatures, shows that the sintering temperature of the synthesized sample was lower than that of traditional micro-sized powder.
Journal: Materials Letters - Volume 60, Issue 27, November 2006, Pages 3241–3244