کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1653597 | 1007666 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Injection and detection of spin current and spin Hall effect in GaAs
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Injection and detection of spin current and spin Hall effect in GaAs Injection and detection of spin current and spin Hall effect in GaAs](/preview/png/1653597.png)
چکیده انگلیسی
A spin current is optically generated in GaAs and is detected by the spin Hall effect based on the extraordinary Hall effect. When photogenerated spin-polarized electrons are injected into the nonmagnetic semiconductor device by dragging them by a moderate electric field (0.35–1.20 kV/cm), a spin Hall voltage (transverse electric field) of 0.41 μV is obtained due to the induced nonequilibrium magnetization, which is proportional to the spin current in GaAs. The findings resulting from this experiment might have practical applications in the field of spintronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 60, Issue 23, October 2006, Pages 2863–2866
Journal: Materials Letters - Volume 60, Issue 23, October 2006, Pages 2863–2866
نویسندگان
M. Idrish Miah,