کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1657359 | 1008282 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Highly conductive SnO2 thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Highly conductive SnO2 thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant Highly conductive SnO2 thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant](/preview/png/1657359.png)
چکیده انگلیسی
Highly conductive SnO2 thin films were grown by atomic layer deposition (ALD) in a wide growth temperature range (50 °C-250 °C), using a tetrakis-dimethyl-amine tin (TDMASn) precursor and an ozone reactant. The ozone SnO2 ALD thin films showed excellent electrical properties (5.63 Ã 10â 4 Ω cm) over 200 °C, but the electrical properties of the films were not measured at low growth temperature (under 125 °C). In order to verify the origin of the electrical properties as a function of growth temperature, the growth behavior and chemical bonding states, film crystallinity, surface roughness, and optical properties were examined. The ALD ozone SnO2 thin films deposited above the 200 °C growth temperature had high carrier concentration (3.2 Ã 1020-1.2 Ã 1021) and Hall mobility (~ 32 cm2 V/s). Also, films deposited at 250 °C exhibited a polycrystalline structure and high transmittance (over 80% at 550 nm wavelength). As a transparent conductive oxide material, the film properties of ALD ozone SnO2 thin films are very suitable due to their excellent high conductivity and reasonable transmittance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 259, Part B, 25 November 2014, Pages 238-243
Journal: Surface and Coatings Technology - Volume 259, Part B, 25 November 2014, Pages 238-243
نویسندگان
Dong-won Choi, Jin-Seong Park,