Effect of sputtering bias voltage on the structure and properties of Zr-Ge-N diffusion barrier films

► We examine the effect of the bias voltage on Zr-Ge-N film's microstructure and composition. ► We study the thermal stability and electrical property of the Cu/Zr-Ge-N/Si structure. ► The Cu/Zr-Ge-N/Si structures kept their integrity, even after being annealed at 800 °C. ► In this study we conclude that Zr-Ge-N is superior to ZrN as a copper diffusion barrier on Si.