Reactive pulsed laser deposition and characterization of niobium nitride thin films

We present a systematic study to explore the effect of important process variables on the composition and structure of niobium nitride thin films synthesized by Reactive Pulsed Laser Deposition (RPLD) technique through ablation of high purity niobium target in the presence of low pressure nitrogen gas. Secondary Ion Mass Spectrometry has been used in a unique way to study and fix gas pressure, substrate temperature and laser fluence, in order to obtain optimized conditions for one variable in single experimental run. The x-ray diffraction and electron microscopic characterization have been complemented by proton elastic backscattering spectroscopy and x-ray photoelectron spectroscopy to understand the incorporation of oxygen and associated non-stoichiometry in the metal to nitrogen ratio. The present study demonstrates that RPLD can be used for obtaining thin film architectures using non-equilibrium processing. Finally the optimized NbN thin films were characterized for their hardness using nano-indentation technique and found to be ~ 30 GPa at the deposition pressure of 8 Pa.

► Deposition of single and multilayer architecture NbN thin films by Reactive PLD.
► Optimization of process parameters by single SIMS analysis on a multilayer coating.
► Near stoichiometric NbN at process pressure of 8 Pa as revealed by PEBS.
► Maximum hardness of ~ 30 GPa for NbN layer at process pressure of 8 Pa.