کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1658850 | 1008362 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ion induced bending (IIB) phenomenon for 3-D structure fabrication
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We propose a thin-film bending technique based on the ion-induced bending (IIB) phenomenon, which enables the fabrication of three-dimensional structural devices and arrays, such as micro-electro mechanical system (MEMS) devices. We investigated the IIB phenomenon with various film materials and various ion species. It was found that the distribution of vacancy occurs under ion-irradiation was the important parameter affecting the degree of bending, irrespective of film material and ion-species. Therefore, it was found that the bending angle could be controlled by the distribution of vacancy. Using this technique, a micron-sized region of a standing thin-film array could be produced using conventional ion-implantation equipment used in semiconductor manufacturing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 206, Issue 5, 25 November 2011, Pages 775-780
Journal: Surface and Coatings Technology - Volume 206, Issue 5, 25 November 2011, Pages 775-780
نویسندگان
Tomoya Yoshida, Masayoshi Nagao, Seigo Kanemaru,