کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1658889 | 1008362 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Methane plasma-based ion implantation of metallic and galvanically oxidized tantalum Methane plasma-based ion implantation of metallic and galvanically oxidized tantalum](/preview/png/1658889.png)
Tantalum and oxidized tantalum exhibit distinct differences when treated with plasma-based ion implantation of methane with − 20 kV. The implantation profiles of carbon are similar, but carbides are formed in the case of tantalum, as verified with X-ray diffraction and X-ray photoelectron spectrometry in combination with depth profiling, whereas there is no detectable carbide in the tantalum oxide film. The distributions of the co-implanted hydrogen also vary in that the intensity in depth profiling with secondary ion mass spectrometry does steadily decrease in the oxidized Ta, while in the metallic Ta it shows a short indentation below the surface and then decreases only very slowly.
Research highlights
► Implantation of hydrocarbons into Ta and Ta2O5.
► Similar carbon depth profiles but different bonding.
► Hydrogen exhibits distinct profile shape in Ta.
Journal: Surface and Coatings Technology - Volume 206, Issue 5, 25 November 2011, Pages 951–954