کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1658889 1008362 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Methane plasma-based ion implantation of metallic and galvanically oxidized tantalum
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Methane plasma-based ion implantation of metallic and galvanically oxidized tantalum
چکیده انگلیسی

Tantalum and oxidized tantalum exhibit distinct differences when treated with plasma-based ion implantation of methane with − 20 kV. The implantation profiles of carbon are similar, but carbides are formed in the case of tantalum, as verified with X-ray diffraction and X-ray photoelectron spectrometry in combination with depth profiling, whereas there is no detectable carbide in the tantalum oxide film. The distributions of the co-implanted hydrogen also vary in that the intensity in depth profiling with secondary ion mass spectrometry does steadily decrease in the oxidized Ta, while in the metallic Ta it shows a short indentation below the surface and then decreases only very slowly.

Research highlights
► Implantation of hydrocarbons into Ta and Ta2O5.
► Similar carbon depth profiles but different bonding.
► Hydrogen exhibits distinct profile shape in Ta.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 206, Issue 5, 25 November 2011, Pages 951–954
نویسندگان
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