کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1659378 | 1517684 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Er-doped dielectric films by radiofrequency magnetron co-sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The radiofrequency magnetron sputtering co-deposition is potentially an excellent synthesis technique to obtain Er-doped dielectric films, materials characterized by the emission of an intense photoluminescence signal at λ = 1.54 μm (the most used wavelength in fiber glass for optical telecommunications). A comparison of the emission of Er3+ ions in different matrices such as silica and alumina is made. All of the deposited Er-doped films showed a photoluminescence yield strongly dependent on the condition of synthesis (in particular, on the way to furnish energy to the growing film) and on the post-synthesis annealing. In all cases, the photoluminescence yield of Er:Al2O3 films was larger than that of Er:SiO2 ones.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 204, Issues 12–13, 15 March 2010, Pages 2023–2027
Journal: Surface and Coatings Technology - Volume 204, Issues 12–13, 15 March 2010, Pages 2023–2027
نویسندگان
E. Cattaruzza, G. Battaglin, M. Muzio, P. Riello, E. Trave,