کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1660029 | 1517691 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Discontinuous yield in InGaAs thin films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Discontinuous yield in InGaAs thin films Discontinuous yield in InGaAs thin films](/preview/png/1660029.png)
چکیده انگلیسی
Discontinuous yield during nanoindentation is observed on a wide range of materials and has generally been associated with materials having a low dislocation density before deformation. The dislocation density of InxGa1 − xAs films grown on GaAs can be varied by changing the atom fraction of In and thereby the lattice mismatch between substrate and film. Using TEM and by varying the dislocation density by means of indentations with different spacings, the probability of a discontinuous yield event in InGaAs was found to correlate with the initial dislocation density estimated from the misfit.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 203, Issues 5–7, 25 December 2008, Pages 713–716
Journal: Surface and Coatings Technology - Volume 203, Issues 5–7, 25 December 2008, Pages 713–716
نویسندگان
S. Korte, I. Farrer, H.E. Beere, W.J. Clegg,