کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1660193 | 1517689 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation](/preview/png/1660193.png)
چکیده انگلیسی
The electronic properties of defects introduced unintentionally, during electron beam deposition (EBD) of Ti and Mo on Cz grown, B-doped Si and those deliberately introduced by proton and electron irradiation are presented in this paper. Deep level transient spectroscopy (DLTS) studies on the samples revealed the following primary hole traps at 0.32Â eV and 0.54Â eV above the valence band after EBD processing, 0.15Â eV, 0.32Â eV after proton irradiation and 0.17Â eV, 0.23Â eV, 0.33Â eV and 0.60Â eV after electron irradiation. The comparison of the defect levels showed one common defect level at 0.32Â eV above the valence band in the three radiation processed samples, and this hole trap is boron related. Most of the defect levels, created in these three samples, are not similar. Higher defect introduction rates were recorded for the proton when compared to the electron irradiation induced primary deep level states. We have also briefly discussed the annealing behaviour of these primary defect levels.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 203, Issues 17â18, 15 June 2009, Pages 2628-2631
Journal: Surface and Coatings Technology - Volume 203, Issues 17â18, 15 June 2009, Pages 2628-2631
نویسندگان
A.G.M. Das, C. Nyamhere, F.D. Auret, M. Hayes,