Metallic sputtering growth of high quality anatase phase TiO2 films by inductively coupled plasma assisted DC reactive magnetron sputtering

Anatase phase titanium dioxide (TiO2) films were deposited on unheated glass substrate by using inductively coupled plasma (ICP) assisted direct current (DC) reactive magnetron sputtering. Oxygen and argon were introduced into the chamber in the vicinity of the substrate and the target, respectively. In order to obtain high deposition rate, all depositions were carried out in the metallic mode of sputtering. X-ray diffraction, X-ray photoelectron spectroscopy and transmission electron microscopy were used for the characterization of film structure and UV–VIS spectrophotometer was employed for the analysis of film optical properties. The TiO2 film grown at an rf power of 500 W and an oxygen partial pressure of 0.20 Pa consists of an essentially complete anatase phase nanocrystallites. This anatase phase TiO2 film exhibits a high transmittance of 85% in the visible region. The lattice spacing of 0.352 nm and the optical band gap of 3.22 eV of this anatase phase TiO2 film match with the standard values of the bulk anatase well. Anatase phase TiO2 films of high quality, in terms of both a high degree of crystallinity and a good oxygen stoichiometry, have been produced in the metallic mode of sputtering at temperature lower than 200 °C.