Preparation of molybdenum oxide film by a magnetic null discharge sputtering method

In this work, molybdenum oxide (MoO3) films were prepared by a magnetic null discharge (MND) sputtering system and some fundamental properties by XRD, XPS and SEM analysis were investigated. The initial and mean insulation resistances of the sample with MoO3 film were about 1.4 MΩ and 800 kΩ, respectively, under the condition of applied voltage of 400 V. The preferred orientation in the films changed from (100) to (210) with substrate temperature. Two XPS peaks of the Mo3d photoelectron were detected at the binding energies of 228.9 eV and 232.4 eV, while the binding energy of the O1s peak was 532.6 eV. The substrate temperature and reactivity gives large effect to the structure and growth of the film and the system is also very useful for performing the uniform reactive deposition. It can be found from the result of a MoO3 film deposition that the system is very useful for performing the uniform reactive sputtering.