کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1661931 1517703 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Composition, structure and nanomechanical properties of C–Si–N thin films deposited by ion implantation assisted plasma beam CVD
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Composition, structure and nanomechanical properties of C–Si–N thin films deposited by ion implantation assisted plasma beam CVD
چکیده انگلیسی

Si- and N-containing a-C:H films were deposited from tetramethylsilane (TMS) vapour and nitrogen onto silicon wafers by an electron cyclotron wave resonance (ECWR) RF plasma beam CVD with simultaneous pulsed N2+ and Ar+ ion bombardment in a plasma immersion ion implantation (PIII) apparatus. Chemical composition and bonding states of the constituent elements were characterised by X-ray photoelectron spectroscopy (XPS) and X-ray induced Auger electron spectroscopy (XAES). Mechanical properties were studied by depth-sensing nanoindentation measurements.Compared to the C / Si = 4 ratio of the precursor, significant loss of C occurred during deposition, resulting in C / Si ranging from 2.39 to 2.90. This effect was most pronounced at low (< 200 V) and high (> 1000 V) self-bias values. Incorporation of nitrogen was significant, resulting in typical N / Si values from 0.7 to 0.9. Formation of extended silicon or silicon carbide clusters could not be detected. The hardness and the reduced modulus of the layers, having maximum values up to 14 and 145 GPa, respectively, decreased with increasing N / Si atomic ratio. C–Si–N layers grown with the application of PIII were characterised by decreased hardness and reduced modulus as compared to those of the layers grown without PIII.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issues 22–23, 20 June 2006, Pages 6420–6424
نویسندگان
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