کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1662200 1517704 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Properties and deposition processes of a-C: H films from CH4/Ar dielectric barrier discharge plasmas
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Properties and deposition processes of a-C: H films from CH4/Ar dielectric barrier discharge plasmas
چکیده انگلیسی

Hydrogenated amorphous carbon (a-C: H) films were deposited from CH4+ Ar gas with low-pressure dielectric barrier discharge (DBD) plasmas. The deposition rate, film hardness and surface roughness were examined as a function of Ar concentration in CH4+ Ar. The experimental results revealed that both film hardness and surface roughness increase with increasing Ar concentration from 20% to 67%, and then decrease for Ar concentration exceeding 67%. Also, the deposition rate decreases monotonously with increasing Ar concentration. The high ratio of Ar+ flux per hydrocarbon species for the cases of Ar concentration exceeding 67% leaded to the decrease in growth rate and in surface roughness. CH4+ and Ar+ kinetic energies during the film deposition process were also analyzed theoretically based on ion drift-diffuse model. The theoretical analysis on ion kinetic energy indicated that the deposition of dense a-C: H film is proportional to an increase in kinetic energy of the hydrocarbon ion and the sputter of energetic Ar+ ions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issues 20–21, 22 May 2006, Pages 5819–5822
نویسندگان
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