کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1662304 | 1517696 | 2007 | 5 صفحه PDF | دانلود رایگان |
This paper presents the growth and characterization of three-dimensional structures using metal-organic (or organometallic) chemical precursors like M(CH3)3, where M is a metal. Their morphology depends principally on growth temperature and conditions at the surface of the substrate. These 3D structures can be separated into two classes: i) one with (Ga, Al, In) metallic alloys shaped as sphere, sceptre or cylinder and a carbon membrane covering the alloy; ii) the other with semiconductor or oxide nanowires capped by a metallic sphere. The metal-organic precursors can be seen as catalysts molecules that grow semiconductors with micro and nanostructures similar to the role of gold particles used to grow nanowires in the VLS mechanism. We present the MOCVD growth of Ga2O3, CuGaxOy and (Ga,In)P nanowires using the metal-organic precursors on metallic or metal containing substrates.
Journal: Surface and Coatings Technology - Volume 201, Issues 22–23, 25 September 2007, Pages 9104–9108