کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1662929 | 1008454 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The study of diffusion and nucleation for CoSi2 formation by oxide-mediated cobalt silicidation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
The role of cobalt in oxide-mediated silicidation is studied in terms of diffusion and nucleation by varying annealing conditions, oxide thickness and implantation in Si substrate. Electroscopic imaging in transmission electron microscopy shows that SiOx act as a one-way diffusion barrier reducing the Co effective concentration at the cobalt silicide growth interface leading to CoSi2 as the first formation phase during silicidation. X-ray photoelectron spectroscopy analysis shows that unreacted Co coexists with CoSi2 at the interface between the SiOx layer and Si substrate, implying that Co diffusion rate is faster than CoSi2 nucleation rate. An Si-implanted substrate can increase the CoSi2 nucleation rate and reduce the Co accumulation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issue 10, 24 February 2006, Pages 3314–3318
Journal: Surface and Coatings Technology - Volume 200, Issue 10, 24 February 2006, Pages 3314–3318
نویسندگان
Juin-Jie Chang, Chuan-Pu Liu, Tsung-Eong Hsieh, Ying-Lang Wang,