کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1662962 1517697 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improving thromboresistance of Ti–O films by phosphorus-doping: Fabricating conditions, characteristics and antithrombotic behavior
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Improving thromboresistance of Ti–O films by phosphorus-doping: Fabricating conditions, characteristics and antithrombotic behavior
چکیده انگلیسی

Surface modification has become an important way to develop new antithrombotic biomaterials. In the past ten years Ti–O films have been engaging much research attention because of their excellent antithrombotic properties. In order to understand the thromboresistance mechanisms involved, we focus our attention in this work on the influence of phosphorus doping on the structure, properties and thromboresistance behavior of these films. The results show that the electrical resistance of the film decreases with increasing annealing temperature, and that phosphorus is redistributed within the film after annealing. The films exhibit different wettability after annealing at various temperatures. P-doped Ti–O thin films show significant improvement of thromboresistance after annealing at higher temperatures. It is suggested that the thromboresistance of Ti–O thin films is related to their semiconductor nature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 201, Issues 19–20, 5 August 2007, Pages 8066–8069
نویسندگان
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