کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663029 | 1517697 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Detection of planar defects caused by ion irradiation in Si using molecular dynamics
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Detection of planar defects caused by ion irradiation in Si using molecular dynamics Detection of planar defects caused by ion irradiation in Si using molecular dynamics](/preview/png/1663029.png)
چکیده انگلیسی
We have analyzed the evolution of defects caused by self-irradiation of crystalline silicon. A classical molecular dynamics simulation was followed by defect analysis using the Pixel Mapping (PM) method. The PM identified {311} planar defects and long-chain structures of the so-called <110> interstitial chains following low energy (1Â keV) ion impact. The areal density obtained from simulation of self-interstitial atoms was about two thirds of that of experiments reported in the literature [Jpn. J. Appl. Phys. 30 (1991) L639], while the atomic configuration on respective planes agreed exactly.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 201, Issues 19â20, 5 August 2007, Pages 8393-8397
Journal: Surface and Coatings Technology - Volume 201, Issues 19â20, 5 August 2007, Pages 8393-8397
نویسندگان
S.T. Nakagawa, G. Betz, H.J. Whitlow,