کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663383 | 1008465 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of conformal copper films on TaN by electrochemical deposition for ULSI interconnects
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Seedless copper electrochemical deposition (ECD) becomes a potential interconnect technology while device dimension keeps shrinking in ULSI design. In seedless copper ECD on TaN, which is a widely used diffusion barrier, uniform growth of copper film on TaN is hindered because a robust native Ta2O5 exists on TaN surface. Complete removal of the native Ta2O5 can be attained using a saturated KOH solution that is assisted by an anodic voltage. This then permits that copper film grows on the pretreated TaN surface in a copper-citrate (Cu-Cit) complex electrolyte. Its growing morphology and deposition rate are dependent on the etching depth of as-deposited TaN in the KOH solution. Even for a very short etching time of 0.8Â s, thin Ta2O5 is totally etched off and the activated TaN surface appears. Thin and conformal copper films grown in a layer-by-layer mode on the TaN surface are proper to function as an ECD seed or metal lines for ULSI interconnects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 201, Issue 6, 4 December 2006, Pages 2712-2716
Journal: Surface and Coatings Technology - Volume 201, Issue 6, 4 December 2006, Pages 2712-2716
نویسندگان
Sunjung Kim, David J. Duquette,