کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663638 | 1517709 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of background gas pressure on copper film deposition and ion current in a hot refractory anode vacuum ARC
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of background gas pressure on copper film deposition and ion current in a hot refractory anode vacuum ARC Influence of background gas pressure on copper film deposition and ion current in a hot refractory anode vacuum ARC](/preview/png/1663638.png)
چکیده انگلیسی
It was shown that the film thickness was uniform with respect to the azimuthal angle around the electrode axis within approximately 10%. The film thickness was independent of gas pressure p, below a critical value pcr. For p > pcr, the film thickness decreased with p, eventually reaching 0. The value of pcr was less for gases with larger molecular weight-60, 10 and 5 mTorr (0.67, 1.33 and 8 Pa) for He, N2 and Ar, respectively. The ion current to a 78 mm2 probe in vacuo increased with time and reached a saturation value of approximately 4.5 mA after about 60 s from arc ignition. The ion flux fraction in the total deposition mass flux was estimated to be about 60% in the fully developed HRAVA (t = 60-90 s).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issues 5â6, 21 November 2005, Pages 1395-1400
Journal: Surface and Coatings Technology - Volume 200, Issues 5â6, 21 November 2005, Pages 1395-1400
نویسندگان
I.I. Beilis, A. Shashurin, R.L. Boxman, S. Goldsmith,