کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663638 | 1517709 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of background gas pressure on copper film deposition and ion current in a hot refractory anode vacuum ARC
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
It was shown that the film thickness was uniform with respect to the azimuthal angle around the electrode axis within approximately 10%. The film thickness was independent of gas pressure p, below a critical value pcr. For p > pcr, the film thickness decreased with p, eventually reaching 0. The value of pcr was less for gases with larger molecular weight-60, 10 and 5 mTorr (0.67, 1.33 and 8 Pa) for He, N2 and Ar, respectively. The ion current to a 78 mm2 probe in vacuo increased with time and reached a saturation value of approximately 4.5 mA after about 60 s from arc ignition. The ion flux fraction in the total deposition mass flux was estimated to be about 60% in the fully developed HRAVA (t = 60-90 s).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issues 5â6, 21 November 2005, Pages 1395-1400
Journal: Surface and Coatings Technology - Volume 200, Issues 5â6, 21 November 2005, Pages 1395-1400
نویسندگان
I.I. Beilis, A. Shashurin, R.L. Boxman, S. Goldsmith,