Dopant mapping in thin FIB prepared silicon samples by Off-Axis Electron Holography

• Quantitative potential mapping of Si PN junctions by Off-Axis Electron Holography in thin FIB prepared samples, down to 50 nm thick.
• Reduction of damage to TEM samples by low energy ion milling, to 10 nm amorphized Si and negligible electrically inactive crystalline regions.
• Perpendicular cross-sectioning of TEM sample to measure directly crystalline and amorphous regions. Thus, measuring accurately mfp in Si.
• Experimental results compared to 3D potential simulations to better understand role of surface damage, thickness, and doping levels.

Modern semiconductor devices function due to accurate dopant distribution. Off-Axis Electron Holography (OAEH) in the transmission electron microscope (TEM) can map quantitatively the electrostatic potential in semiconductors with high spatial resolution. For the microelectronics industry, ongoing reduction of device dimensions, 3D device geometry, and failure analysis of specific devices require preparation of thin TEM samples, under 70 nm thick, by focused ion beam (FIB). Such thicknesses, which are considerably thinner than the values reported to date in the literature, are challenging due to FIB induced damage and surface depletion effects.Here, we report on preparation of TEM samples of silicon PN junctions in the FIB completed by low-energy (5 keV) ion milling, which reduced amorphization of the silicon to 10 nm thick. Additional perpendicular FIB sectioning enabled a direct measurement of the TEM sample thickness in order to determine accurately the crystalline thickness of the sample. Consequently, we find that the low-energy milling also resulted in a negligible thickness of electrically inactive regions, approximately 4 nm thick. The influence of TEM sample thickness, FIB induced damage and doping concentrations on the accuracy of the OAEH measurements were examined by comparison to secondary ion mass spectrometry measurements as well as to 1D and 3D simulations of the electrostatic potentials. We conclude that for TEM samples down to 100 nm thick, OAEH measurements of Si-based PN junctions, for the doping levels examined here, resulted in quantitative mapping of potential variations, within ~0.1 V. For thinner TEM samples, down to 20 nm thick, mapping of potential variations is qualitative, due to a reduced accuracy of ~0.3 V.This article is dedicated to the memory of Zohar Eliyahou.