کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1677595 1518346 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Quantitative dopant distributions in GaAs nanowires using atom probe tomography
چکیده انگلیسی

Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge. This highly transferrable method is able to analyze the full diameter of a nanowire, with a depth resolution better than 0.17 nm thanks to an advanced reconstruction method exploiting the specimen's crystallography, and an enhanced chemical sensitivity of better than 8-fold increase in the signal-to-noise ratio.


► Probing pristine semiconductor NWs from growth substrate has been demonstrated.
► Analyzing the full diameter of a nanowire has been achieved.
► A spatial resolution better than 0.17 nm in depth has been obtained for GaAs.
► An enhanced SNR 100:2 has been achieved.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 132, September 2013, Pages 186–192
نویسندگان
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