کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1677677 | 1518356 | 2012 | 5 صفحه PDF | دانلود رایگان |
An in situ tip preparation procedure compatible with ultra-low temperature and high magnetic field scanning tunneling microscopes is presented. This procedure does not require additional preparation techniques such as thermal annealing or ion milling. It relies on the local electric-field-induced deposition of material from the tip onto the studied surface. Subsequently, repeated indentations are performed onto the sputtered cluster to mechanically anneal the tip apex and thus to ensure the stability of the tip. The efficiency of this method is confirmed by comparing the topography and spectroscopy data acquired with either unprepared or in situ prepared tips on epitaxial graphene grown on Ru (0001). We demonstrate that the use of in situ prepared tips increases the stability of the scanning tunneling images and the reproducibility of the spectroscopic measurements.
► In-situ preparation of tips for scanning tunneling microscopy.
► Compatible with low-temperature, ultrahigh vacuum and high magnetic fields.
► Mechanical annealing increases the tip stability.
► Reproducible scanning tunneling microscopy and spectroscopy in graphene on Ru(0001).
Journal: Ultramicroscopy - Volume 122, November 2012, Pages 1–5