Optimized Ar+-ion milling procedure for TEM cross-section sample preparation

High-quality samples are indispensable for every reliable transmission electron microscopy (TEM) investigation. In order to predict optimized parameters for the final Ar+-ion milling preparation step, topographical changes of symmetrical cross-section samples by the sputtering process were modeled by two-dimensional Monte-Carlo simulations. Due to its well-known sputtering yield of Ar+-ions and its easiness in mechanical preparation Si was used as model system. The simulations are based on a modified parameterized description of the sputtering yield of Ar+-ions on Si summarized from literature.The formation of a wedge-shaped profile, as commonly observed during double-sector ion milling of cross-section samples, was reproduced by the simulations, independent of the sputtering angle. Moreover, the preparation of wide, plane parallel sample areas by alternating single-sector ion milling is predicted by the simulations. These findings were validated by a systematic ion-milling study (single-sector vs. double-sector milling at various sputtering angles) using Si cross-section samples as well as two other material-science examples.The presented systematic single-sector ion-milling procedure is applicable for most Ar+-ion mills, which allow simultaneous milling from both sides of a TEM sample (top and bottom) in an azimuthally restricted sector perpendicular to the central epoxy line of that cross-sectional TEM sample. The procedure is based on the alternating milling of the two halves of the TEM sample instead of double-sector milling of the whole sample. Furthermore, various other practical aspects are issued like the dependency of the topographical quality of the final sample on parameters like epoxy thickness and incident angle.

► An optimized Ar+-ion milling technique for TEM cross-section samples is presented.
► Plane-parallel thickness profiles are achieved by the single-sector ion milling.
► Profile evolution of TEM cross-section samples during Ar+-ion sputtering is simulated.