کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1678089 1009928 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of Kikuchi band contrast reversal in electron backscatter diffraction patterns of silicon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Analysis of Kikuchi band contrast reversal in electron backscatter diffraction patterns of silicon
چکیده انگلیسی

We analyze the contrast reversal of Kikuchi bands that can be seen in electron backscatter diffraction (EBSD) patterns under specific experimental conditions. The observed effect can be reproduced using dynamical electron diffraction calculations. Two crucial contributions are identified to be at work: First, the incident beam creates a depth distribution of incoherently backscattered electrons which depends on the incidence angle of the beam. Second, the localized inelastic scattering in the outgoing path leads to pronounced anomalous absorption effects for electrons at grazing emission angles, as these electrons have to go through the largest amount of material. We use simple model depth distributions to account for the incident beam effect, and we assume an exit angle dependent effective crystal thickness in the dynamical electron diffraction calculations. Very good agreement is obtained with experimental observations for silicon at 20 keV primary beam energy.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 110, Issue 3, February 2010, Pages 190–194
نویسندگان
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