کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1678472 1009942 2009 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A model of secondary electron imaging in the helium ion scanning microscope
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
A model of secondary electron imaging in the helium ion scanning microscope
چکیده انگلیسی

A combination of the ‘semi-empirical’ model for secondary electron production and the TRIM routines which describe ion stopping power, scattering, and transport, has been used to construct a Monte Carlo simulation (IONiSE) that can quantitatively interpret the generation of secondary electrons (SE) from materials by fast helium ions. This approach requires that the parameters of the semi-empirical model be determined by fitting to experimental yield data but has the merit that, unlike more fundamental models, it can be applied with equal ease to both pure elements and complex compounds. The application of the model to predict the topographic yield variation of helium generated SE as a function of energy and material, and to investigate the ratio between SE generated by incident and backscattered ions, is demonstrated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 109, Issue 6, May 2009, Pages 748–757
نویسندگان
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