کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1678599 | 1009949 | 2010 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation](/preview/png/1678599.png)
چکیده انگلیسی
Focused ion beam (FIB) milling is one of the few specimen preparation techniques that can be used to prepare parallel-sided specimens with nm-scale site specificity for examination using off-axis electron holography in the transmission electron microscope (TEM). However, FIB milling results in the implantation of Ga, the formation of amorphous surface layers and the introduction of defects deep into the specimens. Here we show that these effects can be reduced by lowering the operating voltage of the FIB and by annealing the specimens at low temperature. We also show that the electrically inactive thickness is dependent on both the operating voltage and type of ion used during FIB milling.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 110, Issue 5, April 2010, Pages 383–389
Journal: Ultramicroscopy - Volume 110, Issue 5, April 2010, Pages 383–389
نویسندگان
David Cooper, Cyril Ailliot, Jean-Paul Barnes, Jean-Michel Hartmann, Phillipe Salles, Gerard Benassayag, Rafal E. Dunin-Borkowski,