کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1681504 | 1518717 | 2013 | 8 صفحه PDF | دانلود رایگان |
Tungsten (W) films with thicknesses ranging between 1 and 12 μm deposited by magnetron sputtering on silicon substrates were used as a model system for comparing the deuterium (D) retention measured by both temperature programmed desorption (TPD) and nuclear reaction analysis (NRA). Samples were loaded with deuterium ex-situ with an ECR plasma at 370 and 600 K with an energy of 38 eV per deuteron. To avoid diffusion of D into the silicon substrate and to increase adhesion a copper interlayer was applied. The results show that all implanted D atoms were retained exclusively in the W films. The distribution of D is homogenous throughout the W layer with an atomic fraction of 3 ± 0.4 × 10−3. With increasing W thickness the D profile extends to correspondingly larger depths with practically identical D concentration. For W films with a thickness lower than the NRA information depth of about 8 μm the total retained D amount measured by TPD and NRA is in excellent agreement. As expected, for films thicker than the NRA information depth, TPD deviates from NRA.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 300, 1 April 2013, Pages 54–61