کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1681569 | 1518650 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of phosphorous in thin films using the 31P(α,p)34S nuclear reaction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Phosphorus detection and quantification were obtained, using the 31P(α,p)34S nuclear reaction and Rutherford Backscattering Spectrometry, in deposited silicon oxide films containing phosphorus and in carbon substrates implanted with phosphorus. It was possible to determine the total amount of phosphorus using the resonance at 3.640 MeV of the 31P(α,p)34S nuclear reaction in samples with phosphorus present in up to 23 nm depth. Phosphorous amounts as low as 4 × 1014 cm−2 were detected. Results obtained by nuclear reaction were in good agreement with those from RBS measurements. Possible applications of phosphorus deposition routes used in this work are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 371, 15 March 2016, Pages 220–223
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 371, 15 March 2016, Pages 220–223
نویسندگان
E. Pitthan, A.L. Gobbi, F.C. Stedile,