کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1682493 1518722 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Normal-incidence Electron Gun alignment method for negative ion analysis on insulators by magnetic sector SIMS
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Normal-incidence Electron Gun alignment method for negative ion analysis on insulators by magnetic sector SIMS
چکیده انگلیسی

On Cameca magnetic sector SIMS (Secondary Ion Mass Spectrometer) instruments, detection of negative secondary ions during analysis of insulating materials represents one of the more challenging uses of the instrument. This is because the highest sensitivity is achieved using a positive Cesium primary ion beam to sputter a sample held at a negative potential. The combination of positive charge from the primary beam and the acceleration of negative ions from the sample surface results in the build-up of positive charge in the sputtered area. The Normal-incidence Electron Gun (NEG) is used to deliver electrons to neutralize the positive charge build-up. At typical conditions, the electron beam diameter is rather small (∼150 μm), so it is critical to align the NEG to overlay the analysis area as closely as possible. A new method has been developed to utilize cathodoluminescence of gallium nitride (GaN) to visually align the electron gun. This approach is shown to result in reproducible analyses of insulating phases, including depth profiling of oxide on semiconductor materials, bulk analyses for hydrogen, and oxygen isotope ratio microanalyses.


► We developed a method to visually align and optimize the electron gun.
► We found GaN is an ideal cathodoluminescence material for electron gun alignment.
► We lowered sample high voltage to observe cathodoluminescence via viewing scope.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 295, 15 January 2013, Pages 50–54
نویسندگان
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