کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1684966 1010541 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Interface alloying due to Kr-irradiation on Ni/Si system
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Interface alloying due to Kr-irradiation on Ni/Si system
چکیده انگلیسی

This study deals with an investigation of silicide formation at the interface of Ni thin film and Si substrate induced by 300 keV 84Kr2+ ions at a number of doses under ambient condition. The implanted samples were subsequently annealed using a rapid thermal annealing system (RTA) in vacuum environment. The modification of the interface and surface properties has been analyzed using various methods like scanning electron microscope with energy dispersive X-ray analysis (SEM/EDAX), X-ray diffraction (XRD), etc. The energy dispersive X-ray spectra (EDS) show a decrease of Ni content in the samples with increasing dose, which indicates the sputter erosion due to ion irradiation. The SEM micrographs show no considerable surface modification under ion bombardment but the XRD spectra clearly reveal the formation of different phases of Ni2Si and NiSi at lower doses which transforms to NiSi as dose increases.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 256, Issue 1, March 2007, Pages 248–252
نویسندگان
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