کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1685146 | 1010548 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thickness and MeV Si ions bombardment effects on the thermoelectric properties of Ce3Sb10 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The three single layer Ce3Sb10 thin films were grown on silicon dioxide and quartz (suprasil) substrates with thicknesses of 297, 269 and 70Â nm using ion beam assisted deposition (IBAD) technique. The high-energy cross plane Si ion bombardments with constant energy of 5Â MeV have been performed with varying fluence from 1Â ÃÂ 1012, 1Â ÃÂ 1013, 1Â ÃÂ 1014, 1Â ÃÂ 1015Â ions/cm2. The Si ions bombardment modified the thermoelectric properties of films as expected. The fluence and temperature dependence of cross plane thermoelectric parameters that are Seebeck coefficient, electrical and thermal conductivities were determined to evaluate the dimensionless figure of merit, ZT. Rutherford backscattering spectrometry (RBS) enabled us to determine the elemental composition of the deposited materials and layer thickness of each film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 8, April 2008, Pages 1261-1264
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issue 8, April 2008, Pages 1261-1264
نویسندگان
S. Güner, S. Budak, R. Amaral Minamisawa, C. Muntele, D. Ila,