Synthesis and characterization of embedded SiC phase

Synthesis of embedded silicon carbide (SiC) has been carried out in n-type silicon (Si) samples having (1 0 0) and (1 1 1) orientations using high dose implantation of 150 keV carbon (C+) ions at room temperature. The dose is varied from 4 × 1017 ions-cm−2 to 8 × 1017 ions-cm−2 in different samples of both orientations. Post-implantation annealing at 1000 °C is performed in order to anneal out the implantation induced defects and to get a buried silicon carbide layer. Detailed Fourier transform infrared (FTIR) spectroscopy analysis and X-ray diffraction (XRD) studies confirm the formation of cubic SiC precipitates (β-SiC) in the layer. The SiC precipitates have been found to exhibit a better crystalline order in Si (1 0 0) samples than in Si (1 1 1) samples. X-ray diffraction results also indicate the amorphization of ion beam bombarded region of the Si samples. After annealing the amorphized region is recrystallized into a polycrystalline phase of Si.