Ion beam modification of strained InGaAs/InP characterized by HRXRD, PL and AFM

Highly tensile strained InGaAs/InP multi quantum wells have been grown by the LP-MOVPE technique. Such samples were subjected to irradiation with 100 MeV Au8+ ions. These were studied as a function of fluence, then the irradiated samples were annealed by rapid thermal annealing at 700 °C for 60 s in nitrogen atmosphere. We used high resolution X-ray diffraction (HRXRD), photoluminescence (PL) and atomic force microscopy (AFM) characterization techniques to study the interfacial induced changes, band gap modifications and surface morphology. Multi quantum wells were then studied before and after irradiation.