کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686053 | 1518757 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of 120 keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
P-type ZnO film was obtained by N-implantation at energy of 120 keV with annealing at 850 °C in oxygen. Room temperature Hall effect measurements revealed that the carrier concentration and mobility was 9.95 × 1018 cm−3 and 14.3 cm2/vs, respectively, in the implanted ZnO with optimal fluence of 1015 N/cm2, where more N acceptors were activated as confirmed by X-ray diffraction and photoluminescence. The increase of lattice constants and appearance of emission peaks at 3.26 and 3.18 eV after implantation indicated that the p-type ZnO was realized by substitution of N atom for O sublattice.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12–13, June 2008, Pages 2962–2965
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12–13, June 2008, Pages 2962–2965
نویسندگان
Kun Wang, Zhibo Ding, Tianxiang Chen, Di Chen, Shude Yao, Zhuxi Fu,