کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686053 | 1518757 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of 120 keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of 120 keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film Effects of 120 keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film](/preview/png/1686053.png)
چکیده انگلیسی
P-type ZnO film was obtained by N-implantation at energy of 120 keV with annealing at 850 °C in oxygen. Room temperature Hall effect measurements revealed that the carrier concentration and mobility was 9.95 × 1018 cm−3 and 14.3 cm2/vs, respectively, in the implanted ZnO with optimal fluence of 1015 N/cm2, where more N acceptors were activated as confirmed by X-ray diffraction and photoluminescence. The increase of lattice constants and appearance of emission peaks at 3.26 and 3.18 eV after implantation indicated that the p-type ZnO was realized by substitution of N atom for O sublattice.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12–13, June 2008, Pages 2962–2965
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 266, Issues 12–13, June 2008, Pages 2962–2965
نویسندگان
Kun Wang, Zhibo Ding, Tianxiang Chen, Di Chen, Shude Yao, Zhuxi Fu,