Ion beam mixing of an embedded Ta marker layer in Si induced by Al3, Cu2 and Ge2 clusters

Si films with an embedded Ta marker layer are irradiated by Aln (n = 1, 3), Cun (n = 1, 2) and Gen (n = 1, 2), respectively. The profiles of Ta marker with and without irradiation are measured by using Rutherford backscattering (RBS). The more spreading of the profiles of Ta marker induced by the cluster irradiations is observed. The enhanced atomic mixing at the location of Ta marker layer is probably governed by the collective effect of the cluster constituents during the cluster irradiations.