Structural changes of SiC under electron-beam irradiation: Temperature dependence

Electron-beam-irradiation effects on silicon carbide (SiC) was investigated as a function of the irradiated temperatures. Single crystalline 6H-SiC was irradiated with 300 kV electrons at temperatures ranging from −170 to 250 °C. It was found that amorphous SiC is induced at −170 °C and room temperature, while crystalline Si is formed at 250 °C with a high electron fluence. It is considered that preferential knock-on displacement of C atoms and damage recovery play an important role in the formation of the amorphous SiC and crystalline Si.