کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1686502 | 1518763 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of thin high-k and silicide films by means of heavy ion time-of-flight forward-scattering spectrometry
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The use of forward scattered heavy incident ions in combination with a time-of-flight-energy telescope provides a powerful tool for the analysis of very thin (5-30Â nm) films. This is because of greater stopping powers and better detector energy resolution for heavier ions than in conventional He-RBS. Because of the forward scattering angle, the sensitivity is greatly enhanced, thus reducing the ion beam induced desorption during the analysis of very thin films. The drawback of forward scattering angle is the limited mass separation for target elements. We demonstrate the performance of the technique with the analysis of 25Â nm thick NiSi films and atomic layer deposited 6Â nm thick HfxSiyOz films on silicon using 3-8Â MeV 16O ions as projectiles. In these measurements, a depth resolution of 2Â nm was obtained at the surface, while deeper in the film the resolution was limited by multiple scattering. A full composition with detailed impurity analysis can be obtained by combining time-of-flight forward-scattering spectrometry (TOF-FS) and low energy TOF-ERDA measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1â2, August 2006, Pages 292-296
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 249, Issues 1â2, August 2006, Pages 292-296
نویسندگان
T. Sajavaara, B. Brijs, S. Giangrandi, K. Arstila, A. Vantomme, W. Vandervorst,