کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1687925 | 1518761 | 2006 | 12 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Defects evolution and dopant activation anomalies in ion implanted silicon Defects evolution and dopant activation anomalies in ion implanted silicon](/preview/png/1687925.png)
The interactions between the defects and the implanted dopants are at the origin of the diffusion and activation anomalies that are among the major obstacles to the realisation of ultra-shallow junctions satisfying the ITRS requirements.In this paper, we present some recent results on the evolution of extended defects in technology relevant conditions for the fabrication of p+/n ultra-shallow junctions and elucidate for each of them the role of the defects in the diffusion and activation anomalies exhibited by the implanted dopants. The presented studies range from the formation of large Boron-Interstitial Clusters in high-fluence B+-implanted silicon, to the deactivation/reactivation of preamorphised ultra-shallow junctions and, finally, to the impact of co-implanted F on the thermal stability of preamorphised junctions.
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 253, Issues 1–2, December 2006, Pages 68–79