Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects

We present a study of the transformation of extended defects during annealing at 800 °C (from 15 to 2700 s) of preamorphised silicon (30 keV, 1 × 1015 Ge+/cm2). After the early stages, during which the {1 1 3}-rod-like (RL) defects represent the majority defect type, the {1 1 1}-RLs and the dislocation loops (DLs) grow in size and density. After 300 s, the majority of the excess interstitial atoms are bound by the {1 1 1}-RLs. Eventually, after 2700 s all the available Si atoms are stored in the DLs. These results suggest that the {1 1 1}-RL defects are more energetically stable than {1 1 3}s and less stable than DLs.