کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691112 | 1011296 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition](/preview/png/1691112.png)
چکیده انگلیسی
The preferred (110) oriented aluminum nitride (AlN) thin films have been prepared by pulsed laser deposition on p-Si (100) substrates. The films were characterized with X-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and atomic force microscope (AFM). The results indicate that the AlN thin films are well-crystallized when laser energy is higher than 300 mJ/puls. The AFM images show that the surface roughness of the deposited AlN thin films gradually increases with increasing laser energy, but the surface morphologies are still very smooth. The crystallinity and morphology of the thin films are found to be strongly dependent on the laser energy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 85, Issue 2, 20 August 2010, Pages 193–197
Journal: Vacuum - Volume 85, Issue 2, 20 August 2010, Pages 193–197
نویسندگان
Hongju Chen, Caihong Jia, Xinan Zhang, W.F. Zhang,