کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1691209 | 1011300 | 2008 | 6 صفحه PDF | دانلود رایگان |

Boron nitride films were deposited at different substrate temperatures (400–600 K) on Si (100) substrates by RF plasma CVD technique using a mixture of borane-ammonia, argon and nitrogen as the precursor gases. No intentional bias was applied during deposition to modulate the ion energy. The surface textures of the films were obtained by Atomic Force Microscope studies (AFM). X-ray Photoelectron Spectroscopy (XPS) studies were carried out to determine the bonding environment in the coatings. Fourier Transformed Infra-Red (FTIR) spectrums indicated that the films deposited at lower substrate temperature contained h-BN phases and the percentage of c-BN content in the films increased with the substrate temperature. Films deposited at temperature ∼553 K were predominantly c-BN in nature.
Journal: Vacuum - Volume 82, Issue 11, 19 June 2008, Pages 1296–1301