کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1785736 1023392 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dependence of photocurrent on UV wavelength in ZnO/Pt bottom-contact Schottky diode
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Dependence of photocurrent on UV wavelength in ZnO/Pt bottom-contact Schottky diode
چکیده انگلیسی


• The bottom-contacted Schottky diode is devised by growing (000l) ZnO on (111) Pt.
• The photo-response strongly depends on the wavelength of ultra-violet (UV) light.
• Photo-current is considerably increased when illuminating longer-wavelength-UV.
• The behavior results from the wavelength-dependent penetration depth of UV in ZnO.

We fabricated the bottom-contacted ZnO/Pt Schottky diode and investigated the dependence of its photocurrent on the wavelength of illuminated ultraviolet (UV) light source. The bottom-contacted Schottky diode was devised by growing (000l) ZnO on (111) Pt, and the fabricated device showed a strong dependence on the UV wavelength for its photo-response characteristics. When longer-wavelength-UV (e.g., UV-A) was illuminated on the device, the photo-current was increased by a factor of 200, compared to that under illumination of shorter-wavelength-UV (e.g., UV-C). The behavior is attributed to the wavelength-dependent UV penetration depth for ZnO.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 15, Issue 1, January 2015, Pages 29–33
نویسندگان
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