An analysis of 175Â MeV Nickel ion irradiation and annealing effects on silicon NPN rf power transistors

► We have investigated the total dose effects of different high energy ions on Si BJT. ► The LET and NIEL in different layers of Si BJT are calculated using SRIM. ► Almost identical degradation was observed for difference LET high energy ions. ► Worst case total dose radiation effects can be studied using Pelletron accelerator. ► Ion induced degradation in I-V characteristics of BJT can be recovered by annealing.