Keywords: انتقال; Double-gate; Field-effect transistor; Graphene; Transconductance;
مقالات ISI انتقال (ترجمه نشده)
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Keywords: انتقال; Organic field effect transistor (OFET); Small-signal; Multi-layer dielectric; Fully printed; Transconductance; Frequency dependence
Keywords: انتقال; Current mirror; Bulk; Transconductance; Input/output impedance; Bandwidth
Keywords: انتقال; High current densities; Organic field-effect transistor; Transconductance; Kelvin probe microscopy; Space charges
A CMOS quadrature VCO with optimized Colpitts topology for low-voltage applications
Keywords: انتقال; Low-power; Phase-noise; Quadrature voltage controlled oscillator; Transconductance; In-phase anti-phase;
A low phase noise gm-boosted DTMOS VCO design in 180Â nm CMOS technology
Keywords: انتقال; Cross-couple; DTMOS; Phase noise; Transconductance; VCO;
Theoretical logic performance estimation of Silicon, Germanium and SiGe nanowire Fin-Field Effect Transistor
Keywords: انتقال; Nanowire; FinFET; Drain induced barrier lowering (DIBL); Transconductance; Voltage gain;
Impact of thin high-k dielectrics and gate metals on RF characteristics of 3D double gate junctionless transistor
Keywords: انتقال; Junctionless transistor; High-k dielectric; Work function; Transconductance; Early voltage; Cut-off frequency;
Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs
Keywords: انتقال; Transconductance; Charge pumping current; MOSFET; SOI;
A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors
Keywords: انتقال; AlGaN/GaN HFETs; Electron mobility; Transconductance; Polarization Coulomb field scattering;
High performance multi-channel MOSFET on InGaAs for RF amplifiers
Keywords: انتقال; InGaAs; MOSFET; Transconductance; Cut-off frequency;
Planar nanowire transistors from two-dimensional materials
Keywords: انتقال; Transistor; Transconductance; Side gate; Back gate; Two dimensional materials; Graphene; Molybdenum disulfide; Silicon carbide;
Investigation of InP/In0.65Ga0.35As metamorphic p-channel doped-channel field-effect transistor
Keywords: انتقال; InP/InGaAs; Metamorphic; p-channel; Field-effect transistor; Pseudomorphic; Transconductance;
Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate
Keywords: انتقال; AlGaN/GaN HEMT; Transconductance; Linearity; Acceptor-like trap; Barrier layer
Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack
Keywords: انتقال; InGaAs MOSFETs; Logic; Transconductance; Modeling
Dual trench AlGaN/GaN HEMT on SiC substrate: A novel device to improve the breakdown voltage and high power performance
Keywords: انتقال; AlGaN/AlN/GaN/SiC HEMT; Electric field; Breakdown voltage; RF applications; Transconductance
Study of effect of gate-length downscaling on the analog/RF performance and linearity investigation of InAs-based nanowire Tunnel FET
Keywords: انتقال; InAs Tunnel FET; Transconductance; Transconductance generation factor; Cut-off frequency gain bandwidth product; 1-dB compression point
Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension
Keywords: انتقال; Strained SiGe; Transconductance; Threshold voltage; Channel dimension; Interfacial stress
Trigate nanowire MOSFETs analog figures of merit
Keywords: انتقال; Trigate nanowire MOSFETs; Analog figures of merit; Transconductance; Output conductance; Intrinsic gain; High-temperature
Design of Z-copy controlled-gain voltage differencing current conveyor based adjustable functional generator
Keywords: انتقال; Square and triangular wave generator; PWM; Differential mode; Electronic Control; Voltage- and current-mode; Transconductance; Current gain; Voltage differencing current conveyor
A new analytical threshold voltage model of cylindrical gate tunnel FET (CG-TFET)
Keywords: انتقال; CG-TFET; Drain current; Shortest tunneling distance; Transconductance;
High-performance InP/InGaAs co-integrated metamorphic heterostructure bipolar and field-effect transistors with pseudomorphic base-emitter spacer and channel layers
Keywords: انتقال; InP/InGaAs; Metamorphic; Co-integrated; BiFETs; Pseudomorphic; Transconductance
Field-effect measurements of mobility and carrier concentration of Cu2S colloidal quantum dot thin films after ligand exchange
Keywords: انتقال; Fourier transform infrared spectroscopy; Conductivity; X-ray photoelectron spectroscopy; Nanocrystals; Plasmon resonance; Amine; Thiol; Transconductance
Design and analysis of DC gain and transconductance boosted recycling folded cascode OTA
Keywords: انتقال; Recycling amplifier; Folded cascode; Positive feedback; Transconductance
Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application
Keywords: انتقال; InP/InGaAs; Metamorphic; Co-integrated; Complementary; Doping-channel; Field-effect transistor; Transconductance; Noise margins;
Organic thin film transistors with asymmetrically placed source and drain contact
Keywords: انتقال; Frequency response; Injection; Transconductance; Gate–drain capacitance; Asymmetric OTFT
Analytical modeling of surface accumulation behavior of fully depleted SOI four gate transistors (G4-FETs)
Keywords: انتقال; Four gate transistor; 2-D Poisson’s equation; Surface potential; Drain current; Transconductance; Accumulation capacitance
An analysis of 175Â MeV Nickel ion irradiation and annealing effects on silicon NPN rf power transistors
Keywords: انتقال; Ion irradiation; Radiation effects; Excess base current; Transconductance; Gain degradation; Annealing;
Reliability studies on NPN RF power transistors under swift heavy ion irradiation
Keywords: انتقال; BJT; Ion irradiation; Co-60 gamma radiation; Excess base current; Transconductance
Temperature dependent transfer characteristics of graphene field effect transistors fabricated using photolithography
Keywords: انتقال; Photolithographic; Graphene field effect transistors; Transconductance; Mobility;
Digital signal propagation delay in a nano-circuit containing reactive and resistive elements
Keywords: انتقال; Resistance surge; Transit-time delay; RC time constant; L/R time constant; Propagation delay; Transistor frequency; Transconductance;
Measurement of sub-nanometer molecular layers with ISFET without a reference electrode dependency
Keywords: انتقال; ISFET; Transconductance; Mono-molecular layer; Sub-nanometer
Application of advanced 200 GHz Si–Ge HBTs for high dose radiation environments
Keywords: انتقال; Si–Ge HBT; High dose gamma irradiation; G/R traps; E–B spacer oxide; STI oxide; Transconductance
Analytical current equation for short channel SOI multigate FETs including 3D effects
Keywords: انتقال; MOSFET; Compact model; Multigate; Three dimensional; FinFET; Triple-gate; Short channel; Drain-current model; Transconductance
A comparison of 48 MeV Li3+ ion, 100 MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs
Keywords: انتقال; Interface trapped charge; Oxide trapped charge; Threshold voltage; Ion irradiation; MOSFET; Transconductance; Mobility degradation
Synthesis of class-AB log-domain filters based on nonlinear transconductance
Keywords: انتقال; Filter; Log-domain; Current-mode; Current splitter; Transconductance; Class-AB
Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation
Keywords: انتقال; DGHEMT; SGHEMT; Transconductance; Output-conductance; Cut-off frequency; Maximum frequency of oscillation; Unloaded voltage gain; Channel thickness; Short-channel effects; Device aspect ratio
T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers
Keywords: انتقال; Metal–Insulator geometries; T-gate; InAlAs/InGaAs heterostructures; Dual gate; Threshold voltage; Drain current; Transconductance; Transcapacitance and cut-off frequency
Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency
Keywords: انتقال; AlGaN/GaN MISHFET; Cut-off frequency; Gate dielectric engineering; T-gate; Γ-gate; Transconductance; Transconductance generation efficiency
Temperature dependent analytical model of sub-micron GaN MESFETs for microwave frequency applications
Keywords: انتقال; GaN MESFET; Wide band gap semiconductors; Transconductance
Modeling and analysis of fully strained and partially relaxed lattice mismatched AlGaN/GaN HEMT for high temperature applications
Keywords: انتقال; AlGaN/GaN high electron mobility transistor; Polarization; Transconductance; Temperature
The study of δ-doped InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistor
Keywords: انتقال; HEMT; E-mode pHEMT; δ-Doped; Maximum drain-source current; Transconductance; MEDICI; Poisson's equation
Thin film fully-depleted SOI four-gate transistors
Keywords: انتقال; Four-gate transistor; Fully-depleted SOI; Coupling effects; Threshold voltage; Subthreshold swing; Transconductance
A compact C–V model for 120 nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications
Keywords: انتقال; Heterostructure; AlGaN/GaN MODFET; Drain current; Transconductance; Cutoff frequency
An analytical two-dimensional model for AlGaN/GaN HEMT with polarization effects for high power applications
Keywords: انتقال; AlGaN/GaN HEMTs; Polarization; Two-dimensional model; Transconductance; Cut off frequency
Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer
Keywords: انتقال; 85.30.Tv; 73.40.QvMIS-HFET; AlGaN/GaN HFET; Gate leak; Transconductance; Frequency dispersion
AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics
Keywords: انتقال; GaN HEMT; Numerical simulation; Modeling; Experimental I–V; Transconductance
Design of single-gate n-channel and p-channel MOSFETs with enhanced current-drive due to simultaneous switching of front and back channels in SOI CMOS technology
Keywords: انتقال; Silicon on insulator; Transconductance; Subthreshold slope; CMOS
A numerical study of field plate configurations in RF SOI LDMOS transistors
Keywords: انتقال; SOI technology; RF-LDMOS; Field plate; Transconductance; Self-heating; Capacitance analysis
Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface
Keywords: انتقال; Surface conductive layer; Field effect transistor; Transconductance; Cut-off frequency