Impact of thin high-k dielectrics and gate metals on RF characteristics of 3D double gate junctionless transistor

RF performance of 3D double gate junctionless transistor (JLT) is investigated considering thin high-k dielectrics and gate metals. The 3D double gate junctionless transistor (JLT) with 20 nm gate length is designed and simulated in order to study the RF parameters such as transconductance, transconductance generation factor, output conductance and resistance, intrinsic capacitance, cut-off frequency, early voltage, and intrinsic gain. High-k dielectric gate oxide and gate metals have effect on the DC characteristics of JLT. However, in order to evaluate the impact of high-k gate dielectrics on the RF performance of the device, SiO2, Si3N4, HfO2 dielectrics are considered and compared their performances. Furthermore, the effect of various gate metals on RF performances of the device is also discussed. Gate oxide with higher-k value improves the transconductance, output conductance, and intrinsic gain of the device. While, gate metal with lower work function exhibits better RF characteristics in JLT, application of different high-k dielectrics and gate metal have no improvement in cut-off frequency. The investigation gives an idea to optimize the RF performance of the device using suitable gate dielectric and gate metal. This investigation helps to create an opportunity for the junctionless transistor to realize high performances RF circuits.