Trigate nanowire MOSFETs analog figures of merit

• The influence of NW width, length and orientation on analog FoMs has been assessed.
• TGNW MOSFETs feature excellent analog FoMs with simultaneously high Id, gm, VEA, Avo.
• Narrow TGNW MOSFETs are good contender for high-precision analog circuits.
• Performance reduction over the frequency and temperature ranges is very limited.

This work studies, for the first time to our best knowledge, the perspectives of trigate nanowire (TGNW) MOSFETs for analog applications. An effect of nanowire width, length and orientation as well as frequency (up to 4 GHz) and temperature (up to 225 °C) on analog figures-of-merit (FoM) is analyzed. Benchmarking with other advanced devices such as ultra-thin body and BOX (UTBB) MOSFETs and SOI-based FinFETs is presented. TGNW MOSFETs are shown to be very promising for analog applications featuring high transconductance combined with high intrinsic gain. Only a slight reduction of device performance over the frequency and temperature ranges is observed.