کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7942852 1513236 2014 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application
چکیده انگلیسی
DC performance of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors (DCFETs) grown on a low-cost GaAs substrate is first demonstrated. In the complementary DCFETs, the n-channel device was fabricated on the InxGa1-xP metamorphic linearly graded buffer layer and the p-channel field-effect transistor was stacked on the top of the n-channel device. Particularly, the saturation voltage of the n-channel device is substantially reduced to decrease the VOL and VIH values attributed that two-dimensional electron gas is formed and could be modulated in the n-InGaAs channel. Experimentally, a maximum extrinsic transconductance of 215 (17) mS/mm and a maximum saturation current density of 43 (−27) mA/mm are obtained in the n-channel (p-channel) device. Furthermore, the noise margins NMH and NML are up to 0.842 and 0.330 V at a supply voltage of 1.5 V in the complementary logic inverter application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 65, January 2014, Pages 256-263
نویسندگان
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