کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1786965 | 1023428 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature-dependent current conduction mechanism and charge trapping in Ta2O5 RF-sputtered on GaN
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A gallium nitride (GaN) based Metal-Oxide-Semiconductor (MOS) capacitor was fabricated using radio frequency (RF)-sputtered tantalum oxide (Ta2O5) as the high-k gate dielectric. Electrical characteristics of this capacitor were evaluated via capacitance-voltage (C-V), current-voltage (I-V), and interface trap density (Dit) measurements with emphasis on the substrate temperature dependence ranging from 25 °C to 200 °C. Charge trapping and conduction mechanism in Ta2O5 were investigated. The experimental results suggested that higher substrate temperature rendered higher oxide capacitance, reduced gate leakage current, and lowered mid-gap interface trap density at the expenses of high border traps and high fixed oxide charges. The gate leakage current through Ta2O5 was found to obey the Ohm's conduction at lower gate bias and the Poole-Frenkel conduction at higher gate bias.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 14, Issue 1, January 2014, Pages 23-29
Journal: Current Applied Physics - Volume 14, Issue 1, January 2014, Pages 23-29
نویسندگان
Lai-Seng Yeoh, Mat-Johar Abdullah, Zainuriah Hassan,